| 摘要 |
PURPOSE: Fabricating technology for thin film deposition system using pulsed laser is provided to fabricate a hot wall furnace for growing a perfect single crystal thin film while the heterogeneous particles vaporized by a laser beam are not deposited on a substrate. CONSTITUTION: A deposition sample target(2) is irradiated to deposit a thin film by using pulsed laser beam as an energy source. The hot wall furnace(3) is installed in the front of a deposition substrate(4) to form a single crystal thin film. The deposition substrate is rotated at 2-5 millimeter/hour to fabricate a homogeneous sample by using a direct current(DC) motor and a sprocket. The temperature of the deposition substrate is controlled to fabricate the single crystal thin film by using a temperature controller and the hot wall furnace.
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