| 摘要 |
PURPOSE: A semiconductor memory device provided with an overdriving structure is provided to reduce the manufacture time and the manufacture cost by not requiring the amendment repeated at the additional test process or the metal layer. CONSTITUTION: A semiconductor memory device provided with an overdriving structure includes a first power supply source, a first driving unit, a second driving unit and a control unit(40). The first power supply source supplies the normal voltage. The first driving unit drives the power line of the bit line sense amplifier as a voltage applied to the first power supply source and the connection node. The second driving unit drives the connection node as a voltage higher than the normal voltage. And, the control unit controls the second driving unit by detecting the voltage level state of the connection node for the set reference voltage.
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