METHOD OF FORMING MICRO PATTERN OF SEMICONDUCTOR DEVICE TO FORM GATE LINE PATTERN HAVING PATTERN SIZE OF 0.13 MICROMETER AND LESS

摘要

PURPOSE: A method of forming a micro pattern of a semiconductor device is provided to form a gate line pattern having a pattern size of 0.13 micrometer and less by using an oxide layer pattern having a pattern size of 0.13 micrometer and less as an etch mask. CONSTITUTION: A polysilicon layer(12), an oxide layer, a nitride layer, and a photoresist layer are sequentially formed on a semiconductor substrate(10). A photoresist pattern is formed by exposing and developing selectively the photoresist layer. A nitride layer pattern(24) and an oxide layer pattern(26) are formed by etching the nitride layer and the oxide layer. An oxide layer pattern having a reduced pattern size is formed by etching selectively the oxide layer pattern. The nitride layer pattern is removed therefrom. The polysilicon layer is etched by using the oxide layer pattern having a reduced pattern size as an etching mask.