METHOD OF MANUFACTURING LANDING PLUG OF SEMICONDUCTOR DEVICE FOR PREVENTING LOSS OF NITRIDE LAYER DUE TO FAILURE IN DETECTION OF END POINT IN CMP PROCESS

摘要

PURPOSE: A method of manufacturing a landing plug of a semiconductor device is provided to improve productivity by detecting rapidly an end point without loss of a nitride layer in a CMP process. CONSTITUTION: A plurality of line patterns having a laminating structure of a first conductive layer, a polishing stop layer, and a buffer layer including nitrogen are formed on a semiconductor substrate(21). An interlayer dielectric(28) is formed on the entire surface of the semiconductor substrate. A contact hole is formed by etching the interlayer dielectric. A second conductive layer is formed on the interlayer dielectric. A landing plug is formed by a CMP process. The CMP process is performed by detecting an end point by density of NO.