LIGHT EMITTING DEVICE REALIZING SYSTEM-ON-PANEL WITHOUT MAKING TFT PROCESS COMPLEX

摘要

PURPOSE: A light emitting device is provided to realize system-on-panel without making a TFT process complex by reducing a crystallization process of a semiconductive film. CONSTITUTION: A TFT(Thin Film Transistor)(101) has a gate electrode(110) formed on a substrate(100) and a gate insulating layer(111) covering the gate electrode, and is overlapped with the gate electrode by inserting the gate insulating layer. A first semiconductive layer(112) is formed of a semiamorphous semiconductive film. A pair of semiconductive films(113) function as source area or drain area. A third semiconductive film(114) is installed between the first semiconductive film and the second semiconductive films. The second semiconductive films are formed of an amorphous semiconductive film or semiamorphous semiconductive film.