SILOXANE-BASED RESIN CONTAINING GERMANIUM AND FABRICATING METHOD OF SEMICONDUCTOR INTERLAYER DIELECTRIC USING THE SAME FOR ADDING LOW DIELECTRIC PROPERTY TO INTERLAYER DIELECTRIC

摘要

PURPOSE: A siloxane-based resin containing germanium and a fabricating method of semiconductor interlayer dielectric using the same are provided to add a low dielectric property to the interlayer dielectric by using the siloxane-based resin including germanium having the low dielectric property. CONSTITUTION: A siloxane-based resin containing germanium is fabricated by a hydrolysis and condensation process using a monomer, an organic solvent, an acid catalyst or a basic catalyst, and water. An average molecular weight of the siloxane-based resin corresponds to a range of 3000 to 300000.