| 摘要 |
PURPOSE: A method of inspecting a semiconductor device is provided to observe, analyze, and inspect a crystal defect and a junction breakage due to electric stress by using a simple and secure method. CONSTITUTION: An irradiating process is performed to irradiate a wafer(2) in which semiconductor device chips are integrated with a quantum beam having a wavelength. At this time, the laser beam is transmitted through an inside of a crystal of the wafer and does not generate electromotive force due to excitation while the quantum beam is scanned. A detection and display process is performed to detect the thermo-electromotive force generated in a crystalline abnormal part of the wafer by a change in voltage or current which appears between a surface of and a backside of the wafer, and to display the thermo-electromotive force.
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