| 摘要 |
PURPOSE: A method of forming a bit line contact of a semiconductor device is provided to prevent the loss of the bit line contact by forming an insulating spacer on a lateral part of a bit line before a wet-cleaning process. CONSTITUTION: A semiconductor substrate(10) having a gate electrode(12) is provided. A first insulating layer(11) is formed on the substrate. A landing plug region is exposed by selectively etching the first insulating layer. A landing plug(13) is formed to bury the landing plug region. A second insulating layer(14) is formed on the entire surface of the substrate. Bit line contacts(15a,15b) for exposing a part of the landing plug are formed by etching the second insulating layer. Landing plugs(16a,16b) are formed on both sides of the bit line contact. A native oxide layer is removed from a bottom face of the bit line contact by the wet-cleaning process. The insulating spacer is removed therefrom.
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