发明名称 |
HIGH DENSITY PLASMA SOURCE IMPROVING UNIFORMITY OF PLASMA DENSITY EVEN THOUGH WAFER SIZE BECOMES LARGER |
摘要 |
PURPOSE: A high density plasma source is provided to improve the uniformity of a plasma density even though the wafer size becomes larger by employing a step-shaped upper electrode. CONSTITUTION: One or more gas supply openings are formed in a reaction chamber for supplying reaction gas. A plurality of antenna coils(112a-112c) are formed on a stepped part and on a flat plane portion of the reaction chamber. An RF power generator(110) grounded at one end thereof is connected parallel with the plurality of antenna coils(112b,112c). A plurality of variable loads(111a,111b) connect serially the RF power generator with an antenna coil(112a) in the stepped part and with an antenna coil(112b) in an edge portion of each side. A substrate(116) provided with the flat plane portion is formed at the lower side of the reaction chamber. An RF power generator(118) grounded at one end thereof is serially connected with the substrate.
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申请公布号 |
KR20050008065(A) |
申请公布日期 |
2005.01.21 |
申请号 |
KR20030047751 |
申请日期 |
2003.07.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KI SANG |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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