METHOD OF FABRICATING GATE ELECTRODE OF SEMICONDUCTOR DEVICE USING DOUBLE HARDMASK TO PREVENT LEAKAGE CURRENT CAUSED BY HARDMASK NITRIDE LAYER FORMED ON METAL GATE ELECTRODE

摘要

PURPOSE: A method of fabricating a gate electrode of a semiconductor device using a double hardmask is provided to perform easily a process for patterning a poly-metal gate electrode by using a double hardmask method. CONSTITUTION: A gate insulating layer(22) is formed on a semiconductor substrate(21). A first gate electrode layer(23) as a polysilicon layer and a second gate electrode layer(24) as a metal layer are stacked on the gate insulating layer. A hardmask oxide layer(25) and a hardmask polysilicon layer(26) are stacked on the second gate electrode layer. The hardmask polysilicon layer and the hardmask oxide layer are patterned to form an etch mask layer. The first and second gate electrode layers are sequentially patterned by using the etch mask layer and a polymetal gate electrode is formed thereby.