METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE TO PREVENT DETERIORATION OF ELECTRICAL PROPERTIES DUE TO INVERSE NARROW WIDTH EFFECT AND HUMP

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to prevent deterioration of electrical properties due to an inverse narrow width effect and a hump by blocking the generation of a moat from an edge of the isolation layer. CONSTITUTION: A laminated structure of a pad oxide layer pattern and a pad nitride layer pattern is formed on a semiconductor substrate(101) in order to define an isolation region. A trench is formed on the isolation region. An edge of the pad oxide layer pattern is removed by an etching process. A silicon layer is formed on the entire surface of the semiconductor substrate. An insulating material layer(107) is formed to bury the trench. The pad nitride layer pattern and the pad oxide layer pattern are removed therefrom. An oxide layer(108) is formed by oxidizing the silicon layer.