NON-VOLATILE SEMICONDUCTOR MEMORY AND FABRICATING METHOD THEREOF FOR DIRECTLY CONNECTING VIA-CONTACTS TO LOWER CONTACTS

摘要

PURPOSE: A non-volatile semiconductor memory and a fabricating method thereof are provided to connect directly via-contacts to lower contacts without forming data transmission line drawing parts connected to lower contacts. CONSTITUTION: A plurality of second semiconductor regions are formed on a plurality of first semiconductor regions. A plurality of isolation regions extends to a column direction in order to isolate the second semiconductor regions. A first interlayer dielectric(27) is formed on the first semiconductor regions. A lower conductive plug(CB) is buried into the first interlayer dielectric to be connected to one of the second semiconductor regions. A first wiring(56) is buried into the first interlayer dielectric and extends to a row direction. A second interlayer dielectric(29) is formed on the lower conductive plug and the first interlayer dielectric. An upper conductive plug(16) is buried into the second interlayer dielectric. A second wiring(57) is formed on the second interlayer dielectric.