TRENCH MOS CAPACITOR OF SEMICONDUCTOR DEVICE FOR ENSURING HIGH CAPACITANCE BY CONNECTING ADDITIONALLY TOP CONDUCTIVE LAYER OF TRENCH MOS CAPACITOR TO DIODE JUNCTION CAPACITOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A trench MOS capacitor of a semiconductor device and a fabricating method thereof are provided to ensure a high capacitance by connecting additionally a top conductive layer of the trench MOS capacitor to a diode junction capacitor. CONSTITUTION: A first junction layer(16) is formed by implanting a first conductive type impurity into a trench having a predetermined depth on a predetermined area of a semiconductor substrate(10). An insulating layer is formed on the semiconductor substrate including the first junction layer. A conductive layer is formed on the insulating layer to bury the trench. A second junction layer(24) is formed by implanting a second conductive impurity into the semiconductor substrate. A wiring(28) is formed to connect the conductive layer to the second junction layer.