SEMICONDUCTOR DEVICE USING NANO-TUBES AND FABRICATING METHOD INCREASING DEGREE OF INTEGRATION BY USING SELF-ALIGNING METHOD

摘要

PURPOSE: A semiconductor device using nano-tubes and a fabricating method thereof are provided to increase a degree of integration by self-aligning the nano-tubes within a trench. CONSTITUTION: A nano-tube source including a plurality of nano-tubes(30) is prepared. A trench(20) is formed on a substrate in order to define a channel region. The substrate including the trench is vibrated and the nano-tubes are supplied to the vibrating substrate. The nano-tubes are aligned within the trench of the substrate. Each of the nano-tubes is formed with one of a single-wall nano-tube, a multi-wall nano-tube, and a rope nano-tube.