METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING OXYGEN IMPLANTATION PROCESS TO IMPLANT OXYGEN INTO ISOLATION REGION

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to eliminate a process for burying an insulating material into a trench by implanting oxygen into an isolation region to form the isolation layer. CONSTITUTION: An ion implantation mask(103) is formed on a semiconductor substrate(101) in order to define an isolation region. An isolation layer formed with an oxide layer is deposited on the isolation region by implanting oxygen into the isolation region. A silicon layer is formed on a semiconductor substrate before the ion implantation mask is formed on the semiconductor substrate. The silicon layer is formed with an amorphous silicon layer.