POLYCIDE GATE ELECTRODE WITH LOW RESISTIVITY USING METAL-RICH SILICIDE LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A polycide gate electrode and a method for manufacturing the same are provided to reduce resistivity and to improve reliability of a gate oxide layer by forming the polycide gate electrode using a metal-rich silicide layer instead of a silicon-rich silicide layer. CONSTITUTION: A gate oxide layer(32) is formed on a silicon substrate(31). A polysilicon layer(33) is formed on the gate oxide layer. A diffusion barrier layer(34) is formed on the polysilicon layer. A metal-rich tungsten silicide layer(35) is formed on the diffusion barrier layer. A hard mask(36) is formed on the metal-rich silicide layer. A polycide gate electrode is then formed by sequentially patterning the metal-rich silicide layer, the diffusion barrier layer and the polysilicon layer using the hard mask as a mask.