发明名称 |
METHOD FOR FORMING QUANTUM DOT BY USING METAL POWDER TO EASILY CONTROL SIZE, DENSITY AND DISTRIBUTION DEGREE OF QUANTUM DOT |
摘要 |
PURPOSE: A method for forming a quantum dot by using metal powder is provided to easily control the size, density and distribution degree of a quantum dot by adjusting the kind, quantity or heat treatment condition of the metal powder. CONSTITUTION: An insulator precursor diluted with a solvent and metal powder are mixed and stirred. An insulator precursor solution in which the metal powder is melted is molded on a substrate. A heat treatment process is gradually performed on the molded substrate so that the higher temperature of the molded substrate is form 200 deg.C to 500 deg.C.
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申请公布号 |
KR20050007661(A) |
申请公布日期 |
2005.01.21 |
申请号 |
KR20030047196 |
申请日期 |
2003.07.11 |
申请人 |
HANYANG HAK WON CO., LTD. |
发明人 |
JEON, HYOUNG JUN;KIM, YOUNG HO;PARK, HWAN PIL;YOON, CHONG SEUNG |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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