发明名称 METHOD FOR FORMING QUANTUM DOT BY USING METAL POWDER TO EASILY CONTROL SIZE, DENSITY AND DISTRIBUTION DEGREE OF QUANTUM DOT
摘要 PURPOSE: A method for forming a quantum dot by using metal powder is provided to easily control the size, density and distribution degree of a quantum dot by adjusting the kind, quantity or heat treatment condition of the metal powder. CONSTITUTION: An insulator precursor diluted with a solvent and metal powder are mixed and stirred. An insulator precursor solution in which the metal powder is melted is molded on a substrate. A heat treatment process is gradually performed on the molded substrate so that the higher temperature of the molded substrate is form 200 deg.C to 500 deg.C.
申请公布号 KR20050007661(A) 申请公布日期 2005.01.21
申请号 KR20030047196 申请日期 2003.07.11
申请人 HANYANG HAK WON CO., LTD. 发明人 JEON, HYOUNG JUN;KIM, YOUNG HO;PARK, HWAN PIL;YOON, CHONG SEUNG
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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