METHOD OF FORMING GATE OF SEMICONDUCTOR DEVICE TO REDUCE DANGLING BOND BETWEEN SEMICONDUCTOR SUBSTRATE AND GATE OXIDE LAYER

摘要

PURPOSE: A method of forming a gate of a semiconductor device is provided to reduce a dangling bond between a semiconductor substrate and a gate oxide layer by performing an oxidation process using oxygen plasma. CONSTITUTION: An oxidation process using oxygen plasma is performed on the surface of a semiconductor substrate(210). A gate oxide layer(220) is grown on the oxidized surface of the semiconductor substrate. A gate electrode material is deposited on the gate oxide layer. A gate electrode(230) is formed by using the gate electrode material. A thickness of the gate oxide layer is 60 angstrom to 120 angstrom.