Heterojunction bipolar transistor for hyperfrequency applications has improved thermal transfer with a mesa structure incorporating a thermal drain layer

摘要

An electronic component with a thermal dissipater (4) comprises, on the active surface of a substrate, one or more bipolar transistors. Each transistor is produced in a stack of semiconductor layers in the form of mesas, with at least one collector mesa (C). It includes a thermal drain layer in an electrical and thermal insulating material. The thermal drain layer covers the form of the stack, favoring a thermal transfer via the sides (2a, 2b) of the collector mesa towards the thermal drain layer. An independent claim is also included for the fabrication of this semiconductor component.