METHOD OF FORMING STORAGE NODE CONTACT FOR REDUCING PROCESS NUMBER AND MAINTAINING CONSTANT HEIGHT WITHOUT LOSS OF CAPACITOR

摘要

PURPOSE: A method of forming a storage node contact is provided to reduce a process number and maintain a constant height without loss of a capacitor by performing an in-situ etch process within same chamber. CONSTITUTION: An etch stop layer(44), a buffer layer(46,48), a hard mask layer(50), and a photoresist pattern having a storage node contact region are formed on a semiconductor substrate(40) having a conductive plug(42). The hard mask layer is etched by using the photoresist pattern as a mask. The photoresist pattern is removed therefrom. A storage node contact(53) is formed by dry-etching the buffer layer and the etch stop layer by an in-situ method. A cleaning process is performed on the semiconductor substrate. The remaining hard mask layer is removed therefrom. A post-process is performed within an isotropic etch apparatus.