METHOD FOR FORMING MICRO PATTERN OF SEMICONDUCTOR DEVICE TO FORM MICRO PATTERN OF 0.13 MICROMETER OR LOWER

摘要

PURPOSE: A method for forming a micro pattern of a semiconductor device is provided to form a micro pattern of 0.13 micrometer or lower by using a KrF exposure equipment instead of ArF exposure equipment. CONSTITUTION: A layer(32) to be etched, an ARC(anti-reflective coating) melting in basic developer and a photoresist layer are sequentially formed on a semiconductor substrate(30). The photoresist layer is selectively exposed to form an exposure region. While the exposure region of the photoresist layer is etched to form a photoresist pattern(38) by using basic developer, the ARC under the exposure region is isotropically etched to form an ARC pattern(40) having a pattern size smaller than the photoresist pattern. The photoresist pattern is eliminated from the resultant structure. The layer to be etched is etched to form an etch layer pattern by using the ARC pattern as an etch mask.