| 摘要 |
<p>Rinsing nozzles 310 a to 310 e are moved on a wafer W while they are discharging rinsing solution 326 . At that point, discharging openings 317 a to 317 e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.</p> |
