THIN FILM ELECTRODE FOR FORMING OHMIC CONTACT USING BINARY AND TERNARY ALLOY OR SOLID SOLUTION FOR FORMING P-TYPE THERMO-ELECTRONIC OXIDE THIN FILM FOR HIGH-QUALITY GaN-BASED OPTICAL DEVICE AND FABRICATING METHOD FOR BREAKING Mg-H BOND AND INCREASING DENSITY OF EFFECTIVE CARRIER AROUND GaN SURFACE

摘要

PURPOSE: A thin film electrode for forming an ohmic contact using a binary and ternary alloy or a solid solution for forming a p-type thermo-electronic oxide thin film for high-quality GaN-based optical device and a fabricating method thereof are provided to break a Mg-H bond and increase density of effective carrier around a GaN surface by using hydrogen affinity. CONSTITUTION: A first electrode layer(4) includes a Ni-based alloy or a solid solution to form a p-type thermo-electronic oxide thin film, which is laminated on p-type GaN(2). A second electrode layer(5) is laminated on the first electrode layer. The second electrode layer includes one or more element of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co.