SEMICONDUCTOR DEVICE AND VOLTAGE DIVIDER CIRCUIT FOR REMOVING INFLUENCE OF PARASITIC CAPACITANCE TO CAPACITIVE ELEMENT GROUP

摘要

PURPOSE: A semiconductor device and a voltage divider circuit are provided to reduce a size of a capacitive element or a size of a capacitive element group by removing an influence of a parasitic capacitance to the capacitive element group. CONSTITUTION: A semiconductor device includes at least one capacitive element group(C1,C2) having a plurality of unit capacitive elements. At least one lead-out electrode for bottom electrodes of the unit capacitive elements of the capacitive element groups is provided along a circumference of top electrodes of the capacitive element group. A predetermined capacitive element is connected to the capacitive element group. The predetermined capacitive element has a predetermined capacitance value to remove an influence of a parasitic capacitance of the capacitive element group.