METHOD OF REDUCING PLASMA DAMAGE TO GATE OXIDE LAYER OF SEMICONDUCTOR DEVICE BY PREVENTING EXPOSURE OF GATE OXIDE LAYER TO PLASMA ENVIRONMENT OF POSTPROCESS

摘要

PURPOSE: A method of reducing plasma damage to a gate oxide layer of a semiconductor device is provided to improve an electrical characteristic of the gate oxide layer by preventing the exposure of the gate oxide layer to plasma. CONSTITUTION: A gate oxide layer(23) is formed on a semiconductor substrate(21). A gate electrode is formed on the gate oxide layer. A gate spacer(28) is formed at both sidewalls of the gate electrode. A plasma barrier layer(30) is formed on the entire surface of the semiconductor substrate including the gate electrode and the gate spacer. An interlayer dielectric(31) is formed on the plasma barrier layer. A contact hole(32) is formed by etching the interlayer dielectric until the plasma barrier layer is exposed. A surface of the semiconductor substrate is exposed by removing selectively the exposed plasma barrier layer.