METHOD OF MANUFACTURING NANO-PATTERN OF SEMICONDUCTOR DEVICE USING METAL PATTERN WITHOUT COSTLY EXPOSURE EQUIPMENT

摘要

PURPOSE: A method of manufacturing a nano-pattern of a semiconductor device is provided to secure metal patterns with a precise nano-width and a predetermined interval without costly exposure equipment by using a second insulating pattern and a hard mask formed at both sidewalls of the second insulating pattern. CONSTITUTION: A first insulating layer(12), a metal film and a second insulating pattern for controlling the interval of nano patterns are sequentially formed on a semiconductor substrate(10). A hard mask with nano-width is formed at both sidewalls of the second insulating pattern on the metal film and the second insulating pattern is removed therefrom. A plurality of metal patterns(14a) with nano-width are formed on the first insulating layer by patterning the metal film using the hard mask and the hard mask is removed therefrom.