INDUCTIVELY COUPLED PLASMA GENERATING APPARATUS WITH HIGH PLASMA UNIFORMITY AND PLASMA UNIFORMITY CONTROL METHOD USING THE SAME TO MAKE INSIDE OF CHAMBER MAINTAIN OPTIMUM PLASMA UNIFORMITY

摘要

PURPOSE: An inductively coupled plasma generating apparatus with high plasma uniformity is provided to make the inside of a chamber maintain optimum plasma uniformity by previously storing a value when a plurality of source gases capable of being used in etching a substrate have optimum plasma uniformity in a chamber and by using the previously stored value in performing an etch process on a real substrate. CONSTITUTION: A chamber(200) has an electrostatic chuck in which a substrate is installed. Power is applied by a high frequency power supply. A gas injection part injects source gas to the inside of the chamber. A plurality of antennas(220) receive the power from the high frequency power supply, interconnected in parallel with each other and located on the gas injection part. A plurality of sensors(230) are connected to the plurality of antennas, respectively. A variable capacitor is connected between one of the plurality of antennas and its corresponding sensor. A controller(240) receives and stores a measurement valve from the plurality of sensors and controls the variable capacitor, connected to the plurality of sensors and the variable capacitor.