METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE FOR INSULATING UPPER ELECTRODE AND LOWER ELECTRODE AND PREVENTING LEAKAGE CURRENT

摘要

PURPOSE: A method of forming a capacitor of a semiconductor device is provided to insulate an upper electrode and a lower electrode and prevent leakage current by forming an insulator around the upper electrode. CONSTITUTION: An insulating layer is formed on a semiconductor substrate. A cylindrical photoresist pattern is formed by coating and patterning a photoresist on the insulating layer. A first insulating layer pattern having a center island is formed by dry-etching the insulating layer. A first metal layer(206) is formed within the first insulating layer pattern. A second insulating layer pattern(208) having a first trench is formed thereon. A third oxide layer pattern having a second trench is formed by etching the center island. A second metal layer, an insulator layer, and a third metal layer are sequentially formed thereon. A planarization process is performed on the resultant structure.