| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein an extension region can be formed with good positional accuracy in a trench gate structure, and to provide its manufacturing method. SOLUTION: A side wall 5 is formed on the side wall of a trench 3a formed in a semiconductor substrate 3, and a gate insulation film 9 is formed on the bottom of the trench 3a which is exposed from the side wall 5, and under this state, a gate electrode 11 is embedded in the trench 3a. In a surface layer of the semiconductor substrate 3, a source S and a drain D are so located as to face the gate electrode 11 via the side wall 5. Between the source S and the drain D and a channel formation region A below the gate insulation film 9, a low concentration diffusion layer 15 is formed by diffusion of impurities from the side wall 5 into the semiconductor substrate 3. COPYRIGHT: (C)2005,JPO&NCIPI
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