| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can be increased in operating speed by reducing the capacity formed of semiconductor regions and a gate electrode, and to provide a method of manufacturing the device. SOLUTION: In the semiconductor device, a first groove 14 is formed into a substrate 10 and first insulating films 16 are formed to fill up the vicinities of the side walls of the groove 14. At the central part of the groove 14, a second groove is formed so that its bottom section may be exposed and a gate insulating film 22 is formed in the bottom of the second groove. Then a gate electrode 24 is formed on the gate insulating film 22. In the vicinities of the side walls of the first groove 14, in addition, at least parts of the first insulating films 16 are removed until the bottom of the groove 14 is exposed, and the semiconductor regions 26 are formed in the exposed bottom of the groove 14. In the groove 14, moreover, a second insulating film 28 is formed to bury the exposed bottom of the groove 14 and source and drain regions 30 are formed which are demarcated by the first groove 14 in the substrate 10, and respectively connected electrically to the semiconductor regions 26. COPYRIGHT: (C)2005,JPO&NCIPI
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