| 摘要 |
PROBLEM TO BE SOLVED: To make mitigable the concentration of electric field occurring easily at the bending PN junction of a semiconductor element having a planar structure. SOLUTION: A protective film (3) covering the major surface (1a) of a first semiconductor region (1) and the major surface (2a) of a second semiconductor region (2) has a recess (12) and an opening (3a) forming an annular exposed surface (2b) around the recess (12). Since the second semiconductor region (2) is formed in the first semiconductor region (1) by introducing second conductivity type impurities from the annular exposed surface (2b) in addition to the inner surface of the recess (12), the interface of a PN junction (4) between the first semiconductor region (1) and the second semiconductor region (2) formed from the circumferential surface side to the bottom surface side of the recess (12) and wider in the direction substantially parallel with the major surface (1a) of the first semiconductor region (1) has a large curvature. Consequently, the concentration of electric field occurring easily at the bending PN junction of the semiconductor element can be mitigated and a high breakdown voltage can be achieved well. COPYRIGHT: (C)2005,JPO&NCIPI
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