| 摘要 |
In an image sensor device, an insulating interlayer structure having an opening is formed on a semiconductor substrate on which a semiconductor device and a photodetector are formed. An electrically conductive pattern, e.g, copper, fills the opening. A diffusion preventing pattern is formed only on the electrically conductive pattern. A color filter and a lens are also provided in an optical path of the photodetector. The diffusion preventing pattern is not disposed in the optical path of the photodetector. Thus, the image sensor device having the copper pattern may be easily manufactured.
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