| 摘要 |
Multilayer films 2 to 7 containing a light absorption layer 4 are formed on a GaAs substrate. After laminating the GaAs substrate 1 and a glass substrate 8 so that an uppermost surface film 7 of the multilayer film and the glass substrate 8 may come into contact with each other, by pressurizing between the GaAs substrate 1 and the glass substrate 8 and heating them together, both substrates 1 and 8 are fusion-bonded. Next, the GaAs substrate 1 and the buffer layer 2 are first removed, and then the etch stop layer 3 is removed. Then, while coming into contact with the light absorption layer 4, comb-type Schottky electrodes 10 and 11, which are mutually apart, are formed.
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