发明名称 |
Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device |
摘要 |
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
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申请公布号 |
US2005014379(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20040761607 |
申请日期 |
2004.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JOON-HOO;JOO IN-SU;CHOI BEOM-RAK;HUH JONG-MOO |
分类号 |
H01L51/50;H01L21/311;H01L21/336;H01L27/32;H01L29/786;H05B33/00;H05B33/10;H05B33/12;H05B33/14;(IPC1-7):H01L21/311 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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