发明名称 |
Silicon crystallization using self-assembled monolayers |
摘要 |
A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer. |
申请公布号 |
US2005011434(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20030622606 |
申请日期 |
2003.07.18 |
申请人 |
COUILLARD J. GREG;HANCOCK ROBERT R.;LEWIS MARK A. |
发明人 |
COUILLARD J. GREG;HANCOCK ROBERT R.;LEWIS MARK A. |
分类号 |
C03C17/34;C03C17/42;C23C16/02;C30B25/02;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):B05D3/02;C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C03C17/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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