发明名称 Silicon crystallization using self-assembled monolayers
摘要 A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.
申请公布号 US2005011434(A1) 申请公布日期 2005.01.20
申请号 US20030622606 申请日期 2003.07.18
申请人 COUILLARD J. GREG;HANCOCK ROBERT R.;LEWIS MARK A. 发明人 COUILLARD J. GREG;HANCOCK ROBERT R.;LEWIS MARK A.
分类号 C03C17/34;C03C17/42;C23C16/02;C30B25/02;C30B25/18;H01L21/20;H01L21/205;(IPC1-7):B05D3/02;C30B23/00;C30B25/00;C30B28/12;C30B28/14 主分类号 C03C17/34
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