| 摘要 |
<P>PROBLEM TO BE SOLVED: To disclose a semiconductor device and a manufacturing method therefor, which avoid faulty metal contact. <P>SOLUTION: This semiconductor device has: a conductive pad which is a bit line landing pad formed in a non-cell region of a semiconductor substrate; a conductive pattern which is formed on the periphery of the top face of the conductive pad and includes an opening that partially exposes the conductive pad; and a conductive contact which fills the opening and connects the conductive pad to upper wiring. The margin where the metal contact is overlapped by the bit line landing pad can be maximized without changing the design layout of the semiconductor device or the chip size, thereby solving a problem of no connection between the metal contact and the bit line landing pad owing to insufficient margin. Thus, a defect in the semiconductor device which occurs owing to faulty connection of the metal contact is avoided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
