| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a planar type capacitor which can be increased in capacity value without increasing an occupation area, and also to provide its manufacturing method. <P>SOLUTION: In an n-type well of a p-type semiconductor substrate 1, a p-type diffusion layer 15 functioning as a storage node is so formed as to be connected to a p-type source region 8b. On top of the p-type diffusion layer 15, a plate electrode 5b is formed via a capacity insulation film 4b. On a side face of the plate electrode 5b, a plate section side wall 7b is formed. A capacity formation section contact plug 10b is formed through an interlayer insulation film 9 so that part of it may reach the source region 8b. Due to this structure, the capacity of the capacitor can be increased by a capacitor formed by the plate electrode 5b, the plate section side wall 7b, and the capacity formation section contact plug 10b. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
