| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CBD bath for forming an InS layer as a buffer layer between a p type semiconductor layer and an n type semiconductor layer constituting a compound solar cell by a CBD method by forming an InS layer with predetermined thickness without repeating the same operation several number of times. <P>SOLUTION: In this CBD bath for a compound solar battery to be used for a chemical solution growth method to form an InS layer as a buffer layer between a p type semiconductor layer and an n type semiconductor layer constituting a compound solar battery, chlorination indium and/or indium sulfate as an In supply source and thioacetamide as an S supply source are contained, and one kind or two or more kinds of chelating agent selected from a group consisting of tartaric acid, oxalic acid, succinic acid, citric acid and malonic acid and cationic or nonionic surfactant is contained. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
