| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a semiconductor element from being broken by a stress produced by a thermal stress. <P>SOLUTION: In a molded power device, an emitter electrode 13 is formed on the surface of a semiconductor chip 1 with an IGBT formed thereon, by successively forming a first metallic layer 13a composed of an Al alloy, a second metallic layer 13b composed of Ni, and a third metallic layer 13c composed of Au on the surface of the chip 1, and by forming a solder 14 on the emitter electrode 13. The yield stress of the solder 14 is made smaller than at least that of the first metallic layer 13a. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
