| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high frequency electric signal of 40-80 GHz can be transmitted well between a semiconductor element and a connector without causing reflection, or the like. SOLUTION: In the semiconductor device, a semiconductor element 6 receiving a high frequency electric signal is fixed to a package 7 comprising a substrate 1, a ground wiring conductor 2b, a first wiring conductor 2a, a ground pad 3b, an I/O pad 3a, a second wiring conductor 4, and a connector 5. The ground electrode 6b and the I/O electrode 6a of the semiconductor element 6 are connected electrically with the first wiring conductor 2a and the second wiring conductor 4 through bonding wires 8, 8a and 8b. In the semiconductor, the I/O electrode 6a of the semiconductor element 6 being connected with the second wiring conductor 4 is located between a pair of ground electrodes 6b and the end part of the second wiring conductor 4 being connected with the bonding wire is located between a pair of ground wiring conductors 2b. Distance between a bonding wire connecting the I/O electrode 6a and the second wiring conductor 4 and a bonding wire connecting the ground electrode 6b and the ground wiring conductor 2b is set not longer than 0.05 mm. COPYRIGHT: (C)2005,JPO&NCIPI |
