| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide metal polishing slurry, particularly, abrasive slurry that is used for the manufacture of a semiconductor device having copper wiring and can significantly suppress the occurrence of scratches, dishing, erosion even when the polishing rate is increased. <P>SOLUTION: The abrasive slurry contains organic particles having an acetoacetoxy group and water. It is preferable that the organic particles are constituted of a copolymer obtained by emulsion polymerizing 1-50 mass% vinyl-based monomer having the acetoacetoxy group and 99-50 mass% another vinyl-based monomer on the basis of the mass of all monomers. In addition, it is also preferable that the organic particles contain a complexing agent and oxidizing agent. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
