METHOD FOR REMOVING PHOTORESIST LAYER FOR FABRICATING SINGLE ELECTRON DEVICE TO OBTAIN PHOTORESIST-FREE TITANIUM THIN FILM

摘要

PURPOSE: A method for removing a photoresist layer for fabricating a single electron device is provided to obtain a photoresist-free titanium thin film by removing a photoresist layer by an oxygen plasma ashing process and by eliminating titanium oxide having reacted with oxygen while using sulphuric acid. CONSTITUTION: An ashing process is performed in an oxygen plasma atmosphere at a temperature of 200 deg.C to eliminate a photoresist layer for forming a titanium thin film pattern. The photoresist remaining on the titanium thin film pattern exposed after the oxygen plasma ashing process and the titanium oxide generated by the oxygen plasma are etched by a wet etch process.