| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor in which a semiconductor layer is little damaged at the time of manufacturing the transistor, and to provide a method of manufacturing the transistor. SOLUTION: In the field effect transistor, a rectangular body 2 composed of an insulating material is provided on an insulating substrate 1, and a first electrode 3 is formed on the rectangular body 2 in a region from the top surface of the body 2 to the surface of the substrate 1 on both sides of the body 2 through the side faces of the body 2. Then an insulating layer 4 having a projecting shape is formed on the first electrode 3 to cover the surface of the electrode 3. In addition, a second electrode 5 is provided on the top surface of the projecting section of the insulating layer 4, and third electrodes 6 are provided on flat surfaces positioned on both sides of the projecting section of the insulating layer 4. Moreover, a semiconductor layer 7 is formed so that the layer 7 may come into contact with the surfaces of the second and third electrodes 5 and 6 and both side faces of the projecting section of the insulating layer 4. Since the semiconductor layer 7 can be formed after the second and third electrodes 5 and 6 are formed, the semiconductor layer 7 is not damaged by the heat etc., generated at the time of processing the electrodes. COPYRIGHT: (C)2005,JPO&NCIPI
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