发明名称 EMITTER GROUNDED AMPLIFIER CIRCUIT IN GATE DRIVE CIRCUIT OF MOSFET
摘要 PROBLEM TO BE SOLVED: To attain power saving and space saving in an emitter grounded amplifier circuit. SOLUTION: In the emitter grounded amplifier circuit in which an output main MOSFET is driven to supply power to a load Ld, a transistor Q<SB>n1</SB>is used in place of a conventional potential dividing resistor R<SB>C2</SB>, and a potential dividing resistor circuit composed of resistors R<SB>B1</SB>, R<SB>B2</SB>is added thereto. Thus, a collector potential of a transistor Q<SB>n2</SB>can be fixed, and a power loss can be avoided from being concentrated to one component. Namely, the power loss is distributed to the other components, thereby reducing a maximum allowable loss to be loaded on one circuit component and as a result, it is not necessary to enlarge one circuit component more than needed, thereby relatively realizing power saving and space saving. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005020630(A) 申请公布日期 2005.01.20
申请号 JP20030185836 申请日期 2003.06.27
申请人 NIPPON INTER ELECTRONICS CORP 发明人 TOKUDA NOBUTAKA
分类号 H03F3/26;(IPC1-7):H03F3/26 主分类号 H03F3/26
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