| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method and an apparatus which can measure and monitor the thickness and/or properties of a thin film formed on a substrate as needed, and quickly correct a deviation in the process conditions, and which can therefore stably provide products of constant quality. SOLUTION: When a substrate with a metal and an insulating material exposed on its surface is subjected to processing for selectively or preferentially changing the film thickness of the metal portion with the exposed surface of the metal as a reference plane, a change in the film thickness and/or a change in film property of the metal portion during and/or immediately after processing are measured with a film thickness sensor 30a and/or a film property sensor 30b, and on the basis of the results of measurement, the state of the film processing is monitored to adjust the processing conditions. COPYRIGHT: (C)2005,JPO&NCIPI
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