发明名称 |
Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same |
摘要 |
Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.
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申请公布号 |
US2005012126(A1) |
申请公布日期 |
2005.01.20 |
申请号 |
US20030620516 |
申请日期 |
2003.07.16 |
申请人 |
UDAYAKUMAR K. R.;ALBRECHT MARTIN G.;MOISE THEODORE S.;SUMMERFELT SCOTT R.;AGGARWAL SANJEEV;LARGE JEFF L. |
发明人 |
UDAYAKUMAR K. R.;ALBRECHT MARTIN G.;MOISE THEODORE S.;SUMMERFELT SCOTT R.;AGGARWAL SANJEEV;LARGE JEFF L. |
分类号 |
H01L21/02;H01L23/00;(IPC1-7):H01L29/06;H01L21/00;H01L31/032;H01L31/033;H01L31/072 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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