NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

A nitride semiconductor laser element comprising a nitride semiconductor substrate, and a nitride semiconductor layer formed by depositing an n-type semiconductor layer, an active layer and a p-type semiconductor layer thereon, wherein the nitride semiconductor layer has a stripe-form waveguide region of laser light and has protective films on the opposite end faces substantially perpendicular to the waveguide region. In the nitride semiconductor laser element, the nitride semiconductor substrate has a pumping region for absorbing light emitted from the active layer and emitting a pumping light having a longer wavelength, than that of the emitted light, and the end face protective film exhibits a high reflectivity to the wavelength of light emitted from the pumping region. A nitride semiconductor laser element having a good FFP and being not likely to operate erroneously is thereby attained.