| 摘要 |
FIELD: magnetic materials whose axial symmetry is used for imparting magnetic properties to materials. ^ SUBSTANCE: memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media. ^ EFFECT: enhanced speed of nonvolatile memory integrated circuits for computers of low power requirement. ^ 4 cl, 8 dwg |
