SEMICONDUCTOR LIGHT EMITTING ELEMENT USING ZENER TUNNELING EFFECT

摘要

PROBLEM TO BE SOLVED: To solve the following problem; it is difficult to manufacture a semiconductor light emitting element which emits light between a conduction band and a valence band when a p-type or n-type semiconductor is difficult to manufacture in a conventional semiconductor light emitting element which is constituted of junction between a p-type semiconductor and an n-type semiconductor.

SOLUTION: In the element, two electrode layers are both constituted of an n-type semiconductor or a p-type semiconductor and light is emitted by injecting a hole (when an electrode is constituted of an n-type semiconductor) or an electron (when an electrode is constituted of a p-type semiconductor) inside an active layer by Zener tunneling effect. A semiconductor light emitting element can be realized in a semiconductor material wherein p-type or n-type doping cannot be realized and an inexpensive and compact semiconductor light source can be supplied in various wavelength regions.

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