发明名称 THIN FILM GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a thin film gas sensor for maintaining an excellent stability of sensor resistance at high temperature and humidity for long time and driven by a battery. SOLUTION: In the thin film gas sensor, an outer circumference or both ends of a thin support film are supported by a Si substrate, a thin film heater 3 is formed on support substrate 1, 2 like a diaphragm having a thin central part and a thick outer circumference or both ends, the heater 3 is covered with an insulation layer 4, an electrode 5 for a gas sensing film is formed on the insulation layer 4, a gas sensing layer (SnO2) 6 is formed and comprises a thin film semiconductor, a selective combustion layer 7 is formed and covers the gas sensing layer 6, and the stability against a change with age is maintained by a noble metal catalyst such as Pd, Pt carried on a surface layer of the gas sensing layer 6. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005017182(A) 申请公布日期 2005.01.20
申请号 JP20030184535 申请日期 2003.06.27
申请人 OSAKA GAS CO LTD;FUJI ELECTRIC HOLDINGS CO LTD 发明人 TABATA SOICHI;HIGAKI KATSUMI;SASAKI HIROICHI;ONISHI HISAO;KUNIHARA KENJI;SUZUKI TAKUYA;MATSUBARA TAKESHI;KOBAYASHI MITSUO
分类号 G01N27/12;G01N27/04;G01N27/16;(IPC1-7):G01N27/16 主分类号 G01N27/12
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